Publication of the journal

While using MOS ICs in equipment for space objects, the task of assessing radiation resistance during the testing phase of test structures arises. With prolonged low-intensity irradiation of the MOSFET, the accumulated charge on the gate oxide traps decreases due to recombination with electrons that come from silicon as a result of Schottky emission. Therefore, the main impact on the MOSFET parameters is exerted by the charge of surface traps at the Si-SiO2 interface. In this work, the results of characteristics forecast of the MOSFET output stage with exposure to low-intensity ionizing radiation are presented. It has been demonstrated that the slope of the current-voltage characteristic increases with an increase in the density of surface defects at straight line portion, which is due to negative charge of surface defects at the Si-SiO2 interface and a decrease in current on the flat section of current-voltage characteristic. The calculations are based on data obtained in an experiment on the gamma-ray emission of MOSFETs and on measurements of the current-voltage characteristics using an Agilent B1500A semiconductor device characteristic meter.

• Key words: output stage, gamma radiation, MOS transistor
• Published in: CIRCUIT ENGINEERING AND DESIGN
• Bibliography link: Matesheva V. V., Popov V. D. Changes in the characteristics of the analog output stage when exposed to low-intensity radiation. Proc. Univ. Electronics, 2024, vol. 29, no. 6, pp. 787–791. https://doi.org/10.24151/1561-5405-2024-29-6-787-791. – EDN: DYUHIH.
• Financial source: Acknowledgments: the authors express their gratitude to A. F. Kozhin for assistance in conducting gamma radiation dosimetry.